Book chapter
5 - High-speed InAs quantum dot photodetectors for data/telecom
Photodetectors, pp 199-231
2023
Abstract
The extraordinary properties of quantum dots (QDs) have been intensively investigated since the 1990s, with particular emphasis on their wide range of applications to information technology. InAs QDs have emerged as a viable technology for playing a crucial role in optoelectronics. Recent advances in epitaxy have enabled great flexibility in material platforms, device structures, and operating wavelengths; this makes them practical for optical telecommunication applications that operate in the 1.3–1.55µm wavelength region. The possibility of their integration with silicon photonics technology adds to their tremendous appeal both as optical sources and photodetectors in these bands. In this chapter, we review the important milestones and recent trends in these photodetectors. We address advances in InAs QDs growth, photoexcitation physics, carrier transport, and carrier collection efficiency. Performance metrics are compared with competitive innovative technologies.
Metrics
4 Record Views
Details
- Title
- 5 - High-speed InAs quantum dot photodetectors for data/telecom
- Creators
- Adriano Cola - Institute for Microelectronics and MicrosystemsGabriella Leo - Institute of Nanostructured MaterialsAnnalisa Convertino - Institute for Microelectronics and MicrosystemsAnna Persano - Institute for Microelectronics and MicrosystemsFabio Quaranta - Institute for Microelectronics and MicrosystemsMarc Currie - Optical SciencesBahram Nabet - Drexel University
- Publication Details
- Photodetectors, pp 199-231
- Publisher
- Elsevier Ltd
- Edition
- Second Edition
- Resource Type
- Book chapter
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Scopus ID
- 2-s2.0-85152813666
- Other Identifier
- 991022064904004721