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Chapter 11 - Physical Design Trends for Interconnects
Book chapter

Chapter 11 - Physical Design Trends for Interconnects

Ioannis Savidis and Eby G. Friedman
On-Chip Communication Architectures, pp 403-437
2008

Abstract

This chapter gives the complete overview of physical designing trends for interconnects. The complexity of properly designing interconnects in the DSM regime increases with each successive technology generation. Modeling, following the same trend as design, has also increased in complexity. Many factors contribute to the complexity of properly modeling interconnects. Low power, high–speed circuit techniques are essential to expand battery lifetime, and maintain ambient thermal levels. Understanding the causes and methods to minimize dynamic, short-circuit, and leakage power consumption as applied to interconnect design has become critical. Long, narrow interconnect lines increase the resistive and possibly inductive characteristics of a line, requiring unique design methodologies to enhance system performance. In addition, novel techniques in interconnect design also help alleviate deleterious trends that include longer line lengths, greater line impedances, and increased propagation delays. 3-D interconnects is one such technique that can help reduce the line length, and therefore the line impedance. This technique is explained very briefly.

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