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Indentation-induced phase transformations in semiconductors
Book chapter

Indentation-induced phase transformations in semiconductors

Vladislav Domnich, Daibin Ge and Yury Gogotsi
High-Pressure Surface Science and Engineering, pp 381-442
2004
DOI: https://doi.org/10.1201/9780429144097-11

Abstract

Dislocation Slip Bands Indentation Area Silicon Phases Residual Imprints DAC Berkovich Indentation High Pressure Phase Raman Bands Phase Transformation Unloading Rate Average Contact Pressure TEM Study Stacking Faults Fast Unloading Pressure Induced Phase Transformation Vickers Indentation Slip Bands TEM Observation Raman Spectroscopy Unloading Curve High Pressure Phase Transition Raman Microspectroscopy Dislocation Glide Raman Spectra
This chapter is concerned with deformation that involves pressure-induced phase transitions. In general, the response of semiconductors to indentation might involve concurrent processes as brittle macro- and micro-fracture, dislocation and defect formation and structural transformations in the material underneath the indenter. A large number of the works have been aimed at understanding the deformation behaviour of silicon (Si) during indentation. However, the influence of phase transformations on the Si response to contact loading was often underestimated due to the difficulties with structural characterization of the thin surface layer affected by the contact interactions. The possibility of phase transformation during indentation of germanium (Ge) was first suggested by I. V. Gridneva et al based on the experimentally determined Germanium hardness as a function of temperature. The plastically extruded layer around indentations is observed more often in Ge than in Si. Raman microspectroscopy analysis of hardness indentations in Ge revealed the formation of different Ge structures depending on the unloading conditions.

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