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Raman microspectroscopy
Book chapter

Raman microspectroscopy

Vladislav Domnich and Yury Gogotsi
High-Pressure Surface Science and Engineering, pp 349-365
2004
DOI: https://doi.org/10.1201/9780429144097-9

Abstract

Phonon Dispersion Relation Single Point Diamond Turning Raman Band Raman Band Positions Raman Scanning Penetration Depth Elementary Excitations Raman Microspectroscopy Rayleigh Line Strain Tensor Components Zone Centre Phonon Phonon Confinement Model Raman Microspectrometers Raman Frequency Ab Initio Pseudopotential Method Raman Scattering Cross Section Raman Scattering Brillouin Zone Raman Spectrometer NEMS Device Raman Imaging Raman Spectra Holographic Notch Filters Raman Instrumentation Raman Active Modes
In a medium without translation symmetry, the wavevector conservation rule breaks down, and the Raman spectrum again is expected to display features reflecting the density of states of the particular excitation. A generic Raman spectrometer consists of a monochromatic light source for sample illumination, collection optics for redirection of the scattered light into the wavelength analyser and the detector. Integration of a Raman spectrometer with a microscope provides higher spatial resolution suitable for performing Raman analysis on very small regions of a sample. The spatial resolution that the Raman instrumentation can achieve depends on the optical systems used for light delivery and collection. The chapter outlines of the general approach to phase and stress analysis by means of Raman microspectroscopy, using silicon (Si) as the reference material because of the utmost importance of Si for this type of research. In general, mechanical strain may shift the frequencies of the Raman modes and lift their degeneracy.

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