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Silicon, Germanium and Silicon‐Germanium Liquid Phase Epitaxy
Book chapter

Silicon, Germanium and Silicon‐Germanium Liquid Phase Epitaxy

Michael G Mauk
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, pp 109-178
13 Jul 2007

Abstract

fine‐grained silicon source light emitting diodes (LEDs) liquid phase epitaxy (LPE) application LPE and solution growth LPE to silicon‐ and germanium‐based semiconductor devices silicon LPE on monocrystalline and multicrystalline silicon wafers silicon‐metal binary phase diagram steady‐state continuous‐ or semi‐continuous mode processes
This chapter contains sections titled: Introduction and scope of review Historical perspective Basis of silicon and germanium LPE Silicon LPE methods Solvent selection Low‐temperature silicon LPE Purification of silicon for solar cells in an LPE process Electrical properties of LPE‐grown silicon LPE of Si‐ and Ge‐based alloys Selective LPE and liquid phase ELO Solar cells Other applications of silicon and germanium LPE Conclusions and outlook References Appendix 1. Phase equilibria modeling: The silicon‐metal liquidus Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE

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Web of Science research areas
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Optics
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