Conference proceeding
A New Insulator for Thin-Film Transistor Backplanes and for Flexible Passivation Layers
THIN FILM TRANSISTORS 10 (TFT 10), v 33(5), pp 125-134
01 Jan 2010
Abstract
We describe a new flexible material that functions as a gate dielectric of amorphous-silicon thin-film transistors, as a passivation layer for plastic substrates, and as an environmental barrier for organic light-emitting diodes. The material is SiO2 with some silicone polymer character. It is deposited, typically at room temperature, from a glow discharge in which a silicone precursor molecule, hexamethyl disiloxane, is oxidized. Films of the material can be made with a broad range of properties, which vary from those of SiO2 to those of plasma-polymerized silicone. Many macroscopic properties of these films suggest that they are homogeneous. We call the films "hybrid."
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Details
- Title
- A New Insulator for Thin-Film Transistor Backplanes and for Flexible Passivation Layers
- Creators
- Lin Han - Princeton UniversityKatherine Song - Princeton Univ, Dept Elect Engn, Princeton, NJ 08540 USASigurd Wagner - Princeton Univ, Dept Elect Engn, Princeton, NJ 08540 USAPrashant Mandlik - Univ Display Corp, Ewing, NJ 08618 USA
- Contributors
- Y Kuo (Editor)
- Publication Details
- THIN FILM TRANSISTORS 10 (TFT 10), v 33(5), pp 125-134
- Series
- ECS Transactions
- Publisher
- Electrochemical Soc Inc
- Number of pages
- 10
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- School of Biomedical Engineering, Science, and Health Systems
- Web of Science ID
- WOS:000315444100013
- Scopus ID
- 2-s2.0-79952654937
- Other Identifier
- 991019187066504721
InCites Highlights
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- Collaboration types
- Industry collaboration
- Domestic collaboration
- Web of Science research areas
- Electrochemistry
- Materials Science, Coatings & Films