Conference proceeding
A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
Oct 2018
Abstract
A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.
Metrics
10 Record Views
2 citations in Scopus
Details
- Title
- A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation
- Creators
- Francisco Castro - Drexel UniversityIoannis Savidis - Drexel UniversityArturo Sarmiento - National Institute of Astrophysics, Optics and Electronics
- Publication Details
- 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
- Conference
- 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 13th
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Scopus ID
- 2-s2.0-85061823536
- Other Identifier
- 991019170563604721