Conference proceeding
A SPICE model for gate turn-off thyristors
Proceedings of the Twenty-Second Annual North American Power Symposium, pp 145-154
1990
Abstract
The authors present a SPICE gate turn-off thyristor (GTO) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of a parallel connection of two-transistors, three-resistor (2T-3R) cells. The accuracy of the model depends on the number of 2T-3R cells used. This multi-cell GTO model enables one to simulate the static-type negative differential resistance (NDR) I-V characteristics and the switching characteristics of the GTO with a high degree of accuracy. The experimental validation test shows that two parallel 2T-3R cells simulate the switching characteristics of the GTO accurately. A sensitivity study of the SPICE model performance with respect to the model parameters is used to develop the model synthesis procedure.< >
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Details
- Title
- A SPICE model for gate turn-off thyristors
- Creators
- J Schwartzenberg - Drexel UniversityC.L Tsay - Drexel UniversityR Fischl - Drexel University
- Publication Details
- Proceedings of the Twenty-Second Annual North American Power Symposium, pp 145-154
- Publisher
- IEEE Comput. Soc. Press
- Resource Type
- Conference proceeding
- Language
- English
- Other Identifier
- 991019350675804721