Conference proceeding
A Substrate-Epi layer Barrier Related Detection Mechanism At RF Frequencies For the GaAs MSM Photo/Electron Detector
2000 30th European Microwave Conference
Oct 2000
Abstract
The GaAs MSM (Metal - Semiconductor - Metal) device is a very useful planar and MMIC compatible photodetector and electron-detector. We present here a newly identified secondary detection mechanism related to the interface between the semi-insulating substrate and the epitaxial layer. This new mechanism is characterized by a high detection gain but low speed. Experimental results are presented to verify the analysis, and possible applications are suggested by utilizing both the primary and secondary detection mechanisms.
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Details
- Title
- A Substrate-Epi layer Barrier Related Detection Mechanism At RF Frequencies For the GaAs MSM Photo/Electron Detector
- Creators
- Asher Madjar - Rafael Advanced Defense SystemsTamera A Yost - Drexel UniversityPeter R Herczfeld - Drexel University
- Publication Details
- 2000 30th European Microwave Conference
- Conference
- 2000 30th European Microwave Conference, 30th (Paris, France, 02 Oct 2000–05 Oct 2000)
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Scopus ID
- 2-s2.0-84897473778
- Other Identifier
- 991019174591104721