Conference proceeding
A high power circuit model for the gate turn off thyristor
21st Annual IEEE Conference on Power Electronics Specialists, pp 390-397
1990
Abstract
The authors present GTO (gate turn off thyristor) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of parallel connection of two-transistor, three-resistor (2T-3R) circuits which make it compatible with the SPICE program. An experimental validation test shows that the accuracy of the model can be improved by increasing the number of 2T-3R cells.< >
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Details
- Title
- A high power circuit model for the gate turn off thyristor
- Creators
- C.L Tsay - Drexel UniversityR Fischl - Drexel UniversityJ Schwartzenberg - Drexel UniversityH Kan - Drexel UniversityJ Barrow - General Electric (United States)
- Publication Details
- 21st Annual IEEE Conference on Power Electronics Specialists, pp 390-397
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Other Identifier
- 991019350682004721