Conference proceeding
A scalable low-cost manufacturing to hybridize infrared detectors with Si read-out circuits
2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID)
01 Jan 2018
Abstract
A new device-chip hybridization method is described as a scalable manufacturing technique for infrared imagers and sensors. This method avoids low-yield, therefore costly, flip-chip bonding. A thin film of MBE-grown Ga-free nBn type-II superlattice layer structure, tuned for a very long-wavelength infrared (VLWIR), was removed from a GaSb seed substrate by a wet chemical process, subsequent by a physical transfer and Van der Waals attachment to a non-native silicon host substrate. Further device processing steps were performed on the transferred film that exhibited remarkable mechanical stability. VLWIR detectors were fabricated on transferred film, with dark current density of J(dark)=8.8mA/cm(2), quantum efficiency (QE) of up to %55 in long wavelength region, and cutoff wavelength of 16.2microns at 77K.
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Details
- Title
- A scalable low-cost manufacturing to hybridize infrared detectors with Si read-out circuits
- Creators
- Pouya Dianat - Drexel UniversityIEEE
- Publication Details
- 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID)
- Conference
- 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID)
- Publisher
- IEEE
- Number of pages
- 3
- Grant note
- Center for Quantum Devices at Northwestern University, Evanston IL
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Identifiers
- 991019170589504721
InCites Highlights
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- Web of Science research areas
- Optics