Conference proceeding
A study on the negative photoresponse of AlGaAs/GaAs MODFETs
1993 IEEE MTT-S International Microwave Symposium Digest, v 3, pp 1403-1406 vol.3
1993
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Abstract
A model for the mechanism of negative photoresponse, i.e. the decrease of drain current under illumination, in AlGaAs/GaAs MODFETs (modulation-doped field--effect transistors) is presented. A comprehensive experimental study examining the dependence of this phenomena on gate-to-source bias voltage and optical power is also reported. The negative photoresponse is attributed to trapping of photogenerated carriers in the GaAs buffer layer, causing a change in the potential profile and a consequent reduction in the number of carriers in the 2-DEG (two-dimensional electron gas) channel.< >
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Details
- Title
- A study on the negative photoresponse of AlGaAs/GaAs MODFETs
- Creators
- M.A Romero - Drexel UniversityP.R Herczfeld - Drexel UniversityIEEE
- Publication Details
- 1993 IEEE MTT-S International Microwave Symposium Digest, v 3, pp 1403-1406 vol.3
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1993BY61E00308
- Other Identifier
- 991019203461804721
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- Web of Science research areas
- Engineering, Electrical & Electronic