Conference proceeding
Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), v 2000-, pp 1028-1031
2000
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Thermophotovoltaic devices based on InGaAsSb and InAsSbP alloys made by liquid-phase epitaxy are described. These alloys can be readily grown as thick (>50 micron) layers to form "virtual" substrates. The authors are developing cell fabrication technologies to realize series-interconnected InGaAsSb and InAsSbP TPV cell arrays for high-voltage "minimodules" by transferring epitaxial device structures to insulating surrogate substrates.
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Details
- Title
- Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics
- Creators
- M.G. Mauk - AstroPower Inc., Newark, DE, USAZ.A. ShellenbargerJ.A. CoxA.N. TataT.G. WardenL.C. DinettaR.L. MuellerIEEE
- Publication Details
- Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), v 2000-, pp 1028-1031
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:000171592900250
- Scopus ID
- 2-s2.0-0037713790
- Other Identifier
- 991020623909704721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Energy & Fuels
- Engineering, Electrical & Electronic
- Materials Science, Coatings & Films
- Materials Science, Multidisciplinary