Conference proceeding
An explanation for the rise in T(sub c) in the Tl- and Bi-based high temperature superconductors
01 Apr 1990
Abstract
Using the plasmon exchange model for the high T(sub c) superconductor, it is shown that the T(sub c) rises with an increase in the number of CuO layers per unit cell, which is in agreement with recent observations in the Tl- and Bi-based compounds. The calculation also suggests that the sample will become superconducting in successive stages and that there is a saturation effect, i.e., that T(sub c) cannot be raised indefinitely by increasing the number of CuO layers.
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Details
- Title
- An explanation for the rise in T(sub c) in the Tl- and Bi-based high temperature superconductors
- Creators
- S. M. Bose - Drexel UniversityP. Longe - Liege Univ
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Identifiers
- 991019292235404721