Conference proceeding
Analytical description of electric field profile in heterojunctions
1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2, v 2, pp 545-547
1999
Abstract
We propose a model that describes the electric field profile as it extends into the GaAs layer of a modulation-doped AlGaAs-GaAs structure. This closed-form analytical expression is obtained from an accurate two-dimensional electron gas (2DEG) sheet density model and is particularly suitable for simulating the effects of absorption modulation on the spectral response of multilayer photodetectors. A significant improvement in model accuracy is achieved by introducing an exponential coefficient that provides a closer description of the electric field profile behavior near the heterointerface where field strengths are highest. Results are compared with device simulation programs.
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Details
- Title
- Analytical description of electric field profile in heterojunctions
- Creators
- F Castro - Bell LabsB Nabet
- Publication Details
- 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2, v 2, pp 545-547
- Conference
- 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Other Identifier
- 991019182640804721