Conference proceeding
Analytical model with empirical verification for heterojunction bipolar transistors under illumination
Proceedings of 1995 IEEE MTT-S International Microwave Symposium, v 1, pp 49-52
1995
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Abstract
A new model for the HBT has been developed which solves for the electrical and photogenerated currents in base, emitter and collector. The model accounts for the discontinuity in quasi-fermi level by defining an effective carrier interface velocity. Experimental and theoretical curves relating to the device behavior are presented and compared.< >
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Details
- Title
- Analytical model with empirical verification for heterojunction bipolar transistors under illumination
- Creators
- L.E.M De Barros - Drexel UniversityA PaolellaP.R HerczfeldP Enquist
- Publication Details
- Proceedings of 1995 IEEE MTT-S International Microwave Symposium, v 1, pp 49-52
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1995BD21N00011
- Other Identifier
- 991019203462804721
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- Web of Science research areas
- Engineering, Electrical & Electronic