Broad Bandwidth, Large Dynamic Range Intermediate Growth Temperature GaAs MSM Photodetectors

B.C Tousley; N Davids; A.H Sayles; A Paolella; P Cooke; M.L Lemoune; R.P Moerkirk; B Nabet; L.C Liou

doi:10.1109/LEOSST.1995.764176

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Conference proceeding

Broad Bandwidth, Large Dynamic Range Intermediate Growth Temperature GaAs MSM Photodetectors

B.C Tousley, N Davids, A.H Sayles, A Paolella, P Cooke, M.L Lemoune, R.P Moerkirk, B Nabet and L.C Liou

IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology

1995

DOI: https://doi.org/10.1109/LEOSST.1995.764176

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Abstract

Bandwidth

Dark current

Dynamic range

Gallium arsenide

Photoconductivity

Photodetectors

Radiative recombination

Temperature dependence

Temperature distribution

Ultrafast optics

Metal-semiconductor-metal (MSM) photodetectors are detectors of choice for their low cost of fabrication, high sensitivity, low dark current, and monolithic integrability with other microwave and millimeter wave devices.

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Title: Broad Bandwidth, Large Dynamic Range Intermediate Growth Temperature GaAs MSM Photodetectors
Creators: B.C Tousley - United States Military Academy
N Davids
A.H Sayles
A Paolella
P Cooke
M.L Lemoune
R.P Moerkirk
B Nabet
L.C Liou
Publication Details: IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology
Conference: IEEE/LEOS 1995 LEOS Summer Topical Meetings. Flat Panel Display Technology
Publisher: IEEE
Resource Type: Conference proceeding
Language: English
Academic Unit: Electrical and Computer Engineering
Other Identifier: 991019222808504721

Broad Bandwidth, Large Dynamic Range Intermediate Growth Temperature GaAs MSM Photodetectors

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Abstract

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