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Comparison of the phase noise performance of HEMT and HBT based oscillators
Conference proceeding

Comparison of the phase noise performance of HEMT and HBT based oscillators

Xiangdong Zhang, D Sturzebecher and A.S Daryoush
Proceedings of 1995 IEEE MTT-S International Microwave Symposium, v 2, pp 697-700 vol.2
1995

Abstract

Circuit noise Circuit topology Frequency HEMTs Heterojunction bipolar transistors Laboratories Low-frequency noise Microwave devices Microwave oscillators Phase noise
This paper presents a comparative study on the phase noise contribution of HBT and HEMT oscillators. For a quantitative comparison, HBT and HEMT oscillators were constructed at 5.6 GHz using the same circuit topology. Experimental results show that the low-frequency (LF) noise (i.e. 1/f noise) in HBT is relatively lower than that in HEMT; however, the lowest phase noise can be achieved in the HEMT oscillator due to its low LF noise up-conversion to the phase noise. A proposed theoretical model explains the difference in noise up-conversion performance of HEMT and HBT. The experimental investigation emphasizes the importance of LF noise level and its up-conversion factor in the design of microwave oscillators.< >

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Web of Science research areas
Engineering, Electrical & Electronic
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