Conference proceeding
Composite Dielectric/Metal Sidewall Barrier for Cu/Porous Ultra Low-k Damascene Interconnects
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004
2004
Abstract
The integration of Cu metallization with porous ultra low-k dielectrics requires a more robust diffusion barrier than the conventional physical vapor deposited (PVD) Ta or TaN barrier. In this work, a composite sidewall diffusion barrier consisting of dielectric/metal bilayer structure is successfully integrated in Cu/porous ultra low-k interconnects to improve the interconnect performance and reliability. With the use of a thin Al stuffing layer between Ta and the dielectric layers, further improvements in the interconnect performance and reliability are achieved
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Details
- Title
- Composite Dielectric/Metal Sidewall Barrier for Cu/Porous Ultra Low-k Damascene Interconnects
- Creators
- K Prasad - Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.Zhe Chen - Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.N JiangS.S SuC.Y Li
- Publication Details
- Conference on Optoelectronic and Microelectronic Materials and Devices, 2004
- Conference
- Conference on Optoelectronic and Microelectronic Materials and Devices, 2004
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000235153400006
- Scopus ID
- 2-s2.0-46149125035
- Other Identifier
- 991019196781304721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics