Conference proceeding
Contact-induced properties of semiconducting nanowires and their local gating
NANOENGINEERED NANOFIBROUS MATERIALS, Vol.169, pp.313-322
NATO Science Series II-Mathematics Physics and Chemistry
01 Jan 2004
Abstract
Contacts and interfaces between three-dimensional and quasione dimensional structures may dominate charge transfer behavior in the nano-scale regime. Properties arise as a result of such contacts that reside in neither system alone. Of particular interest is when a Schottky barrier is formed between the metallic contact and a semiconducting onedimensional (1D) nanowire. We show how current conduction is modified as a result of reduced dimensionality and present a model that examines the effect of Coulombic force on the Schottky barrier formed between a 1D semiconductor and a metallic electrode. Using existing theories of Schottky contacts, we introduce a capacitively coupled charge that further modifies the potential profile of the interface and changes both tbermionic and tunneling currents through such a metal-1D junction. We model changes in the Schottky barrier height due to a superposition of the electric field, the image force and this Coulombic potential.
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Details
- Title
- Contact-induced properties of semiconducting nanowires and their local gating
- Creators
- E GalloA AnwarB Nabet
- Contributors
- S Guceri (Editor)Y G Gogotsi (Editor)Kuznetsov (Editor)
- Publication Details
- NANOENGINEERED NANOFIBROUS MATERIALS, Vol.169, pp.313-322
- Series
- NATO Science Series II-Mathematics Physics and Chemistry
- Publisher
- Springer Nature
- Number of pages
- 10
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Identifiers
- 991019170373104721
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