Conference proceeding
Correlation of alkali metal‐induced work function changes on semiconductor and metal surfaces
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 7(4), pp 915-918
Jul 1989
Abstract
The Cs/GaAs(110) system has been characterized using the techniques of angle‐resolved ultraviolet photoemission spectroscopy and medium energy ion scattering spectroscopy. In agreement with previous studies, the adsorption of Cs on the GaAs(110) surface at room temperature is found to cause a decrease in the work function by ∼3.6 eV. In contrast to analogous measurements on metal surfaces, no minimum is observed in the work function change (Δφ) vs Cs coverage (Θ) up to saturation. Using medium energy ion scattering, the absolute saturation coverage of Cs/GaAs(110) at room temperature has been determined to be (4.0±0.1)×101
4 atoms⋅cm−
2 which corresponds to the density of metallic Cs. Based upon photoemission measurements, the lack of Fermi‐level emission indicates that the interface is nonmetallic at this concentration. The implications of these results are discussed in comparison with alkali metal adsorption on metal surfaces.
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Details
- Title
- Correlation of alkali metal‐induced work function changes on semiconductor and metal surfaces
- Creators
- D. Heskett - Department of Physics, University of Rhode Island, Kingston, Rhode Island 02881T. Maeda Wong - Department of Materials Science and Engineering, University of Pennsylvania, Phildelphia, Pennsylvania 19104A. J. Smith - University of PennsylvaniaW. R. Graham - Department of Materials Science and Engineering, University of Pennsylvania, Phildelphia, Pennsylvania 19104N. J. DiNardo - Drexel UniversityE. W. Plummer - Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104
- Publication Details
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 7(4), pp 915-918
- Conference
- 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, 16th
- Number of pages
- 4
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1989AK87200057
- Other Identifier
- 991019183963504721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology
- Physics, Applied