Conference proceeding
CuInSe/sub 2//CdS simulation and modeling
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, v 2, pp 1173-1178
1991
Abstract
A simulator that can deduce the carrier density and diffusion length from experimental QE (quantum efficiency) curves at different applied voltages has been developed, and applied to CIS solar cells produced by a novel sputtering approach. An analytic expression for the dark diode current of an insulating graded bandgap solar cell has been obtained for the case of the gap increasing linearly away from the junction. The results indicate a diode factor ranging from approximately 1.6 at low voltages to 2 at higher voltages. An increase in open-circuit voltage is expected to be roughly half of the increase in the energy gap, subject, however, to a maximum value set by the smaller of the built-in voltages in the conduction or valence bands.< >
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Details
- Title
- CuInSe/sub 2//CdS simulation and modeling
- Creators
- A Rothwarf - Drexel UniversityI Gonchar - Drexel UniversityY Melnikova - Drexel UniversityF Shapiro - Drexel UniversityT LommassonR.R Arya
- Publication Details
- The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, v 2, pp 1173-1178
- Conference
- 22nd IEEE Photovoltaic Specialists Conference - 1991, 22nd
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:A1991BW27J00221
- Other Identifier
- 991019182757604721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Energy & Fuels
- Engineering, Electrical & Electronic
- Physics, Applied