Conference proceeding
Effect of phase transformations on hardness of semiconductors
Materials Research Society Symposium - Proceedings, Vol.481, pp.249-254
31 Dec 1998
Abstract
Models that describe hardness of materials do not account for stress-induced phase transformations that occur under sharp indenters. However, experimental work shows that some materials can be transformed under the indenter into new, high-pressure phases with properties that differ significantly from those of the pristine material. In particular, semiconductors (Si, Ge and other) experience Herzfeld-Mott transition (metallization). Significant volume changes can accompany these transformations. In the present paper, Tanaka`s model has been modified to account for reversible phase transformations under contact loading.
Metrics
1 Record Views
Details
- Title
- Effect of phase transformations on hardness of semiconductors
- Creators
- B.A GalanovO.N Grigor`ev - Inst. for Problems of Materials Science, Kiev (Ukraine)Y.G Gogotsi - Univ. of Illinois, Chicago, IL (United States). Dept. of Mechanical Engineering
- Publication Details
- Materials Research Society Symposium - Proceedings, Vol.481, pp.249-254
- Publisher
- Materials Research Society, Warrendale, PA (United States); United States
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Identifiers
- 991014969852404721