Conference proceeding
Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings, pp 54-58
1996
Abstract
The fabrication of low threshold current GaAs/AlGaAs gradient index separate confinement triple quantum well lasers grown on a substrate misoriented a few degree off (100) toward A in a high CO background is investigated. It is found that the threshold current could be reduced from 32.5 mA to 15.7 mA by tilting the substrate 6/spl deg/. The photoluminescence results reveal that a carbon impurity, like oxygen, could also be incorporated and trapped at and near AlGaAs/GaAs interfaces during growth and result in excessive scattering and loss and thus a high threshold current. Substrate misorientation for 6/spl deg/ toward A could reduce the incorporation of the carbon impurity to an unobservable level.
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Details
- Title
- Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
- Creators
- D.H Zhang - Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., SingaporeC.Y LiS.F Yoon
- Publication Details
- 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings, pp 54-58
- Conference
- 1996 Conference on Optoelectronic and Microelectronic Materials and Devices
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:A1996BJ34V00012
- Other Identifier
- 991019196774204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Materials Science, Multidisciplinary
- Optics