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Electromagnetic interaction of on-chip antennas and CMOS metal layers for wireless IC interconnects
Conference proceeding

Electromagnetic interaction of on-chip antennas and CMOS metal layers for wireless IC interconnects

Ankit More and Baris Taskin
Proceedings of the 20th symposium on great lakes symposium on vlsi, pp 413-416
16 May 2010

Abstract

electromagnetic interconnects on-chip antennas VLSI
The electromagnetic interaction of on-chip antennas and metal interconnects modeled in a 250 nm complementary metal-oxide semiconductor (CMOS) technology is investigated. A finite element method (FEM) based 3-D full-wave solver is used to perform the electromagnetic field analysis. It is shown that there can be significant signal coupling between the on-chip transmitting antenna and the metal interconnects on a die (-12.09 dB for a 1.6 mm long, 2 um wide interconnect at a distance of 1 um from the antenna). Design considerations for metal interconnects in the presence of on-chip antennas are presented in order to limit the undesirable electromagnetic coupling.

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