Conference proceeding
Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]
Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, pp 121-122 vol.1
2004
Abstract
In this work, (InMn)As/InAs p-n heterojunctions have been fabricated and their electronic and magnetic properties characterized. The (In,Mn)As films, deposited by atmospheric pressure meta organic vapor phase epitaxy, are ferromagnetic at room temperature as determined by magneto-optical Kerr effect (MOKE) measurements and variable-temperature magnetic force microscopy. The J-V characteristics of these junctions were measured over the temperature range of 78 to 300 K. In addition, the magnetic field dependence of the I-V characteristics has been measured. The magnetoresistive properties of these heterojunctions suggest they may be suitable for use in spintronic devices.
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Details
- Title
- Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]
- Creators
- S.J. May - Northwestern UniversityB.W. Wessels - Northwestern University
- Publication Details
- Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, pp 121-122 vol.1
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Scopus ID
- 2-s2.0-18044391068
- Other Identifier
- 991021934208104721