Conference proceeding
Electronic structure of K/Si(111) interfaces
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, v 11(4), pp 2049-2053
Jul 1993
Abstract
Photoemission studies of the K/Si(111)7×7 and K/Si(111)(√3×√3)R30°‐B interfaces show that both interfaces are semiconducting at room temperature saturation coverage. At both types of interfaces, a dispersionless K‐induced surface state is observed below the Fermi level. We argue that these interfaces are correlated systems. We provide conclusive evidence that the onset of metallization and long‐range conductivity occurs during the development of the second and third layers at cryogenic temperatures.
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Details
- Title
- Electronic structure of K/Si(111) interfaces
- Creators
- H. H. Weitering - Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104J. Chen - University of PennsylvaniaN. J. DiNardo - Drexel UniversityE. W. Plummer - Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104
- Publication Details
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, v 11(4), pp 2049-2053
- Conference
- 39th National Symposium of the American Vacuum Society, 39th
- Number of pages
- 5
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Biochemistry and Molecular Biology; Physics
- Web of Science ID
- WOS:A1993LP00800075
- Scopus ID
- 2-s2.0-84912914627
- Other Identifier
- 991019173519504721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Materials Science, Coatings & Films
- Physics, Applied