Conference proceeding
Evaluation of diffusion barrier layers in Cu interconnects
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), v 2002-, pp 373-376
2002
Abstract
In this paper, we compare the experimental results on the suitability of oxygen or nitrogen containing SiC (SiCO or SiCN) with conventional SiN as a capping layer to prevent Cu diffusion into interlevel dielectric (ILD) layer in a typical Cu based interconnect structure. In addition to reducing the dielectric constant (k) value of the barrier, SiCN and SiCO show comparable performance in terms of preventing the Cu diffusion as well as offering good dielectric breakdown strength.
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Details
- Title
- Evaluation of diffusion barrier layers in Cu interconnects
- Creators
- K Prasad - Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., SingaporeX.L Yuan - Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., SingaporeC.Y LiR Kumar
- Publication Details
- 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), v 2002-, pp 373-376
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000186184000088
- Scopus ID
- 2-s2.0-84952665528
- Other Identifier
- 991019196787904721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Materials Science, Multidisciplinary
- Optics
- Physics, Applied
- Physics, Condensed Matter