Conference proceeding
Experimental and Theoretical Analysis of Photocurrents in GaAs MESFETs Operated in Normally off Mode
1990 20th European Microwave Conference, v 1(20), pp 584-589
Sep 1990
Abstract
Optical control of microwave devices, particularly MMIC, is a rapidly growing research area. This paper presents a theoretical analysis, which accurately predicts the photocurrents of MESFETs operated in normally OFF mode. The model accounts for the variation of the intensity and wavelength of the incident light. The analysis includes both photovoltaic and photoconductive effects. The photocurrent in the semi-insulating substrate under the gate depletion region is considered. The leakage current between the drain and source bonding pads via the substrate is also included in the model. Good agreement is realized between measured and calculated results. The model can be used as a tool for the optimal design of MESFET optical detectors.
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Details
- Title
- Experimental and Theoretical Analysis of Photocurrents in GaAs MESFETs Operated in Normally off Mode
- Creators
- Asher Madjar - Drexel UniversityPeter R Herczfeld - Drexel UniversityArthur Paollela - United States Department of the Army
- Publication Details
- 1990 20th European Microwave Conference, v 1(20), pp 584-589
- Conference
- 1990 20th European Microwave Conference, 20th (Budapest, Hungary, 09 Sep 1990–13 Sep 1990)
- Publisher
- IEEE
- Number of pages
- 6
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1990BV75R00085
- Scopus ID
- 2-s2.0-0025528213
- Other Identifier
- 991019203360104721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Telecommunications