Conference proceeding
Exploring Switching Limit of SiC Inverter for Multi-kW Multi-MHz Wireless Power Transfer System
Conference proceedings - IEEE Applied Power Electronics Conference and Exposition, v 2023-, pp 2952-2957
19 Mar 2023
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Silicon carbide (SiC) MOSFET has significantly facilitated high-power and high-frequency inverter design for wireless power transfer (WPT) systems. However, in the multi-kW multi-MHz area, the application of the SiC full-bridge inverter is still insufficient. This paper aims to explore the switching limit of SiC full-bridge inverter at multi-kW power levels and provides a methodology for MOSFET selection, inverter circuit design, and zero-voltage switching (ZVS) realization. Two sets of inverters are respectively implemented based on isolated gate driver UCC5390 and non-isolated IXRFD631 and tested at a switching frequency of 3MHz-4MHz and an input dc voltage of 350V 550V. The experimental results firstly reveal the potential and capability of a SiC full-bridge inverter in achieving kilowatts high power level at multi-MHz switching frequency with 4.39kW at 3MHz and 3.19kW at 4MHz, and a switching limit of 4MHz is proposed for the SiC full-bridge inverter with overall consideration of ZVS availability and inverter safety.
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Details
- Title
- Exploring Switching Limit of SiC Inverter for Multi-kW Multi-MHz Wireless Power Transfer System
- Creators
- Yao Wang - Drexel UniversityReza Kheirollahi - Drexel UniversityFei Lu - Drexel UniversityHua Zhang - Rowan University
- Publication Details
- Conference proceedings - IEEE Applied Power Electronics Conference and Exposition, v 2023-, pp 2952-2957
- Publisher
- IEEE
- Number of pages
- 6
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:001012113603012
- Scopus ID
- 2-s2.0-85162273025
- Other Identifier
- 991022207170004721
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- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic