GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour

Conference proceeding

Peer reviewed

Michael G Mauk, Bryan W Feyock and Jeffrey E Cotter

Journal of crystal growth, v 225(2-4), pp 528-533

01 May 2001

Additional Links

Applied sciences

Cross-disciplinary physics: materials science; rheology

Deposition technology

Electronics

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Microelectronic fabrication (materials and surfaces technology)

Physics

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Vapor phase epitaxy; growth from vapor phase

9 Record Views

12 citations in Scopus

Title: GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour
Creators: Michael G Mauk - Astro Power, Inc., Solar Park, Newark, DE 19716-2000, United States
Bryan W Feyock - AstroPower, Inc., Solar Park, Newark, DE 19716-2000, USA
Jeffrey E Cotter - AstroPower, Inc., Solar Park, Newark, DE 19716-2000, USA
Publication Details: Journal of crystal growth, v 225(2-4), pp 528-533
Conference: Twelfth American Conference on Crystal Growth and Epitaxy, 12th (Vail, Colorado, United States, 13 Aug 2000–18 Aug 2000)
Publisher: Elsevier
Resource Type: Conference proceeding
Language: English
Academic Unit: Engineering Leadership and Society/Engineering Technology
Web of Science ID: WOS:000169394300077
Scopus ID: 2-s2.0-0035335114
Other Identifier: 991020623758404721

This publication has contributed to the advancement of the following goals:

Data related to this publication, from InCites Benchmarking & Analytics tool:

Web of Science research areas: Crystallography; Materials Science, Multidisciplinary; Physics, Applied