Conference proceeding
Gain enhancement of low-temperature GaAs heterojunction MSM photodetectors
Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), pp 274-275
1998
Abstract
Summary form only given. Molecular beam epitaxy (MBE) growth of the GaAs at temperature ranges of 200/spl deg/C and 600 /spl deg/C substantially affects its optical and electronic properties. Low-temperature (LT), around 200/spl deg/C, and intermediate temperature (IT), around 400/spl deg/C, growth by MBE has been employed in a variety of device applications including transistors, mixers, and photodetectors. In the device proposed here, a heterojunction of AlGaAs is grown on top of an LT/IT active layer. Trenches are formed in the AlGaGs and Schottky contacts of Ti:Au are deposited in the trenches, laterally contacting the heterojunction interface.
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Details
- Title
- Gain enhancement of low-temperature GaAs heterojunction MSM photodetectors
- Creators
- J Culp - Drexel UniversityB NabetF CastroA Mohamed
- Publication Details
- Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), pp 274-275
- Conference
- Conference on Lasers and Electro-Optics
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Digital Media; Electrical and Computer Engineering
- Scopus ID
- 2-s2.0-0031630857
- Other Identifier
- 991019182776004721