Conference proceeding
Gate controlled 2-DEG varactor for VCO applications in microwave circuits: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS
1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2, pp.585-588
01 Jan 1999
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Abstract
A novel gate-controlled Schottky diode varactor is introduced. The three terminal varactor is a modulation doped heterostructure of AlGaAs/GaAs with two Schottky contacts, similar to a metal-semiconductor-metal (MSM) diode. Schottky metal contacts are made to a two dimensional electron gas (2-DEG), The third, gate, contact is formed from highly doped n(+) GaAs material to allow an open optical window that can be used for optical gating and mixing. Structure capacitance is less than 1 PF and a change of more than 30 percent from the zero bias capacitance is observed with the applied gate voltage. The interdigital structure dimensions can be scaled to cover a wide range of operations in the microwave adn millimeter wave regimes.
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Details
- Title
- Gate controlled 2-DEG varactor for VCO applications in microwave circuits
- Creators
- A AnwarB NabetJ Culp
- Contributors
- H E HernandezFigueroa (Editor)H L Fragnito (Editor)
- Publication Details
- 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2, pp.585-588
- Conference
- 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
- Publisher
- IEEE
- Number of pages
- 4
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Identifiers
- 991019170140804721
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- Engineering, Electrical & Electronic
- Optics
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