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Heterojunction bipolar phototransistors for analog microwave photonic systems
Conference proceeding

Heterojunction bipolar phototransistors for analog microwave photonic systems

A Paolella, L.E.M de Barros, P Herczfeld, P Enquist and W Van Meerbreke
Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics, pp 351-354
1995

Abstract

Equations Gallium arsenide Heterojunction bipolar transistors Linearity MESFETs Nonlinear optics Optical receivers Optical saturation Phototransistors Stimulated emission
The Heterojunction Bipolar Transistor (HBT) commonly used in GaAs MMICs for microwave and millimeter wave systems can perform as a high speed photodetector with inherent gain and high linearity. The use of the phototransistor will allow circuit designers to develop a new class of photonic/millimeter wave circuits. A new model for the HBT has been developed which solves for the electrical and photogenerated currents. Experimental and theoretical curves relating to the device behavior are presented and compared.

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