Conference proceeding
Heterojunction bipolar transistors under illumination: theory and experiment
Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, v 2, pp 920-925
1995
Abstract
A new model for the HBT has been developed which solves for the electrical and photogenerated currents in the base, emitter, and collector. The model accounts for the discontinuity in the quasi-fermi level by defining an effective carrier interface velocity. Experimental and theoretical curves relating to the device behavior are presented and compared.
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Details
- Title
- Heterojunction bipolar transistors under illumination: theory and experiment
- Creators
- L.E.M de Barros - Drexel UniversityA PaolellaP HerczfeldIEEE
- Publication Details
- Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, v 2, pp 920-925
- Conference
- 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1995BF98S00150
- Other Identifier
- 991019182641304721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics
- Telecommunications