Conference proceeding
High power RF generation with optically activated bulk GaAs devices
1988 IEEE MTT-S International Microwave Symposium Digest, v 2, pp 1071-1074
1988
Abstract
The direct generation of high-power radio frequencies was demonstrated, utilizing sections of charged transmission line cables and optically activated semiconductor (OAS) switches. A Q-switched Nd:YAG laser was used to switch an array of GaAs semiconductors, biased at 2 kV DC, resulting in a peak RF output of 7.0 kW at VHF (30 MHz). The maximum current achieved was approximately 12 A, with a pulse width of about 100 ns, instead of the anticipated values of 20 A and 67.5 ns. The longer pulse width, as well as the lower current amplitude, are caused primarily by inductance in the connections between OAS devices.< >
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Details
- Title
- High power RF generation with optically activated bulk GaAs devices
- Creators
- A Kim - United States Department of the ArmyM Weiner - United States Department of the ArmyR Youmans - United States Department of the ArmyP Herczfeld - United States Department of the ArmyA RosenAimee Yuka W Kim - Psychology
- Publication Details
- 1988 IEEE MTT-S International Microwave Symposium Digest, v 2, pp 1071-1074
- Conference
- 1988 IEEE MTT-S International Microwave Symposium Digest
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Psychological and Brain Sciences (Psychology); Electrical and Computer Engineering; [Retired Faculty]
- Other Identifier
- 991019182771304721