Conference proceeding
High quality GaAs/InGaAs/AlGaAs vertical-cavity surface-emitting lasers grown at a constant temperature by molecular beam epitaxy
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings, pp 63-66
1996
Abstract
Low threshold current GaAs/InGaAs vertical cavity surface emitting lasers could be successfully grown by molecular beam epitaxy at a fixed substrate temperature of 560/spl deg/C which is compromised for InGaAs and AlGaAs materials, The thickness of each pair of layers in the device structures could be easily controlled using an infrared pyrometer system. Lasers with a three quantum well active region grown under such conditions show a threshold current density of 310 A cm/sup -2/ and a maximum output power of 0.8 mW from a 15/spl times/15 /spl mu/m/sup 2/ device at room temperature continuous wave operation.
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Details
- Title
- High quality GaAs/InGaAs/AlGaAs vertical-cavity surface-emitting lasers grown at a constant temperature by molecular beam epitaxy
- Creators
- Z.H Zhang - Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., SingaporeC.Y Li
- Publication Details
- 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings, pp 63-66
- Conference
- 1996 Conference on Optoelectronic and Microelectronic Materials and Devices
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:A1996BJ34V00014
- Other Identifier
- 991019196541504721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Materials Science, Multidisciplinary
- Optics