Conference proceeding
High temperature chlorination of SiC for preparation of tribological carbon films
Symposium on High Temperature Corrosion and Materials Chemistry; San Diego, CA; USA; 3-8 May 1998, pp.324-333
03 May 1998
Abstract
Carbon films can be produced on SiC surfaces by high temperature chlorination. SiCl sub 4 is much more thermodynamically stable than CCl sub 4 at elevated temperatures, so that chlorine reacts selectively with the Si at SiC surfaces, leaving carbon behind. The structure of the carbon layer is affected by temperature and by the composition of the chlorinating gas mixture. Carbon films have been formed on the surfaces of commercially available monolithic SiC specimens by high temperature chlorination at atmospheric pressure in Ar-H sub 2 -C1 sub 2 gas mixtures. The films have been characterized by electron microscopy and Raman spectroscopy, and compared with the films produced earlier on Beta-SIC powders in similar environments.
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Details
- Title
- High temperature chlorination of SiC for preparation of tribological carbon films
- Creators
- D A ErsoyM J McNallanY Gogotsi
- Publication Details
- Symposium on High Temperature Corrosion and Materials Chemistry; San Diego, CA; USA; 3-8 May 1998, pp.324-333
- Conference
- Symposium on High Temperature Corrosion and Materials Chemistry (San Diego, California, United States, 03 May 1998 - 08 May 1998)
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Identifiers
- 991014969860604721