Conference proceeding
Internal photovoltaic effect in microwave devices
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4), v 3, pp 1505-1508 vol.3
1994
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Abstract
This paper is concerned with the internal photovoltaic effect in microwave MODFETs and MESFETs. Characteristic of the photovoltaic effect are the large gain and logarithmic variation of the photoresponse with light intensity. Although the basic photodetection mechanisms are different for the two types of devices, in each case the incident light acts as an additional terminal, an "optical gate". The optimization of the photoresponse and the photodetection performance of these devices, with respect to responsivity and bandwidth, are also discussed.< >
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Details
- Title
- Internal photovoltaic effect in microwave devices
- Creators
- M.A Romero - Drexel UniversityL.E.M de Burros - Drexel UniversityP.R Herczfeld - Drexel University
- Publication Details
- 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4), v 3, pp 1505-1508 vol.3
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1994BB20R00350
- Other Identifier
- 991019203464004721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics
- Telecommunications