Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing

Conference proceeding

S. W Loh, D. H Zhang, R Liu, C. Y Li and A. T S. Wee

Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, pp 173-176

2002

Additional Links

Annealing

Argon

Atomic force microscopy

Chemical technology

Chemical vapor deposition

Conducting materials

Copper

MOCVD

Plasma temperature

Scanning electron microscopy

8 Record Views

1 citations in Scopus

Title: Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing
Creators: S. W Loh - Nanyang Technological University
D. H Zhang - Nanyang Technological University
R Liu - National University of Singapore
C. Y Li
A. T S. Wee
Publication Details: Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, pp 173-176
Conference: 6th IEEE Workshop on Signal Propagation on Interconnects, 6th
Publisher: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Number of pages: 1
Resource Type: Conference proceeding
Language: English
Academic Unit: Materials Science and Engineering
Scopus ID: 2-s2.0-46649112140
Other Identifier: 991019196532804721