- Title
- Is there a link between very high strain and metastable phases in semiconductors: cases of Si and GaAs?
- Creators
- P PUECH - Laboratoire de Physique des Solides, Université Paul Sabatier-IRSAMC-CNRS., 31062 Toulouse, FranceF DEMANGEOT - Laboratoire de Physique des Solides, Université Paul Sabatier-IRSAMC-CNRS., 31062 Toulouse, FrancePaulo Sergio PIZANI - Departamento de Fisica, Universidade Federal de São Carlos, CP 369, 13560-970 São Carlos, SP, BrazilV DOMNICH - Department of Materials Engineering, Drexel University, LeBow Building, 3141 Chestnut Street, Philadelphia, PA 19104, United StatesY GOGOTSI - Department of Materials Engineering, Drexel University, LeBow Building, 3141 Chestnut Street, Philadelphia, PA 19104, United States
- Publication Details
- Journal of physics. Condensed matter (Print), v 16(2), pp S39-S47
- Conference
- 7th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 7th (Lille, France, 25 May 2003–29 May 2003)
- Publisher
- Institute of Physics; Bristol
- Grant note
- Université des sciences et technologies de Lille ; Laboratoire de structure et propriétés de l'état solide
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000189006900006
- Scopus ID
- 2-s2.0-0442326590
- Other Identifier
- 991014877930804721
Conference proceeding
Is there a link between very high strain and metastable phases in semiconductors: cases of Si and GaAs?
Journal of physics. Condensed matter (Print), v 16(2), pp S39-S47
2004
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Metrics
Details
UN Sustainable Development Goals (SDGs)
This publication has contributed to the advancement of the following goals:
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Physics, Condensed Matter