Conference proceeding
Lifetime measurements by open circuit voltage decay in GaAs and InP diodes
IEEE Conference on Photovoltaic Specialists, pp 394-398 vol.1
1990
Abstract
Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.< >
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Details
- Title
- Lifetime measurements by open circuit voltage decay in GaAs and InP diodes
- Creators
- H.G. Bhimnathwala - Rensselaer Polytechnic InstituteS.D. Tyagi - Rensselaer Polytechnic InstituteS. Bothra - Rensselaer Polytechnic InstituteS.K. Ghandi - Rensselaer Polytechnic InstituteJ.M. Borrego - Rensselaer Polytechnic Institute
- Publication Details
- IEEE Conference on Photovoltaic Specialists, pp 394-398 vol.1
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1990BS39H00074
- Other Identifier
- 991021865923604721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Energy & Fuels
- Engineering, Electrical & Electronic