Conference proceeding
Local variation of metal-semiconducting carbon nanotube contact barrier height
Proceedings of the 2nd IEEE Conference on Nanotechnology, v 2002-, pp 435-438
2002
Abstract
Carbon nanotubes provide great promise for future use as electronic devices. Previously we have used a conducting-tip atomic force microscope to measure the local field effect in a metal-semiconducting C nanotube-metal device. Here we propose a consistent electrostatic model that incorporates the image force, electric field and tip potential and describes how the latter reduces the potential barrier seen by thermionically emitted carriers in the metal-nanotube junction. The model describes a position-dependent barrier change, consistent with experimental data.
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1 citations in Scopus
Details
- Title
- Local variation of metal-semiconducting carbon nanotube contact barrier height
- Creators
- B Nabet - Drexel UniversityE Gallo - Drexel UniversityM FreitagA.T JohnsonX ChenIEEE
- Publication Details
- Proceedings of the 2nd IEEE Conference on Nanotechnology, v 2002-, pp 435-438
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000178016200104
- Scopus ID
- 2-s2.0-84948954770
- Other Identifier
- 991019168241304721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Crystallography
- Engineering, Electrical & Electronic
- Instruments & Instrumentation
- Optics
- Physics, Applied