Conference proceeding
Metal-semiconductor-metal photodetectors on intermediate temperature MBE grown GaAs for lightwave/millimeter-wave applications
1996 IEEE MTT-S International Microwave Symposium Digest, v 2, pp 915-918 vol.2
1996
Abstract
Intermediate growth temperature (IGT) GaAs Metal-Semiconductor-Metal (MSM) photodetectors enable an optimal combination of large dynamic range and speed. In addition these devices are suitable for monolithic integration. The static and temporal response of GaAs MSMs grown by Molecular Beam Epitaxy (MBE) at 350/spl deg/C has been measured.
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Details
- Title
- Metal-semiconductor-metal photodetectors on intermediate temperature MBE grown GaAs for lightwave/millimeter-wave applications
- Creators
- A Paolella - United States Army TACOM Life Cycle Management CommandG TaitP CookeB NabetB Tousley
- Publication Details
- 1996 IEEE MTT-S International Microwave Symposium Digest, v 2, pp 915-918 vol.2
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:A1996BF95U00212
- Other Identifier
- 991019182659104721
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- Web of Science research areas
- Engineering, Electrical & Electronic