Conference proceeding
Metastable Defects in Monolayer and Few-Layer Films of MoS2
ADVANCED MATERIALS, v 2005(1)
01 Jan 2018
Abstract
We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. We use scanning tunneling microscopy and Kelvin probe force microscopy in order to obtain measurements of the local density of states, work function and nature of defects in MoS2 films. We track the evolution of defects that are formed under annealing in ultra-high vacuum conditions. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS2. The results provide estimates of the thermal budgets available for reliable fabrication of MoS2-based integrated circuit electronics and indicate the importance of defect control and layer passivation.
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Details
- Title
- Metastable Defects in Monolayer and Few-Layer Films of MoS2
- Creators
- M. Precner - Drexel Univ, Dept Phys, Philadelphia, PA 19104 USAT. Polakovic - Drexel Univ, Dept Phys, Philadelphia, PA 19104 USAD. J. Trainer - Temple Univ, Dept Phys, Philadelphia, PA 19122 USAA. Putilov - Temple Univ, Dept Phys, Philadelphia, PA 19122 USAC. Di Giorgio - Temple Univ, Dept Phys, Philadelphia, PA 19122 USACone - Temple Univ, Dept Phys, Philadelphia, PA 19122 USAX. X. Xi - Temple Univ, Dept Phys, Philadelphia, PA 19122 USAM. Iavarone - Temple Univ, Dept Phys, Philadelphia, PA 19122 USAG. Karapetrov - Drexel Univ, Dept Phys, Philadelphia, PA 19104 USA
- Contributors
- S M Bose (Editor)S K Tripathy (Editor)M Hota (Editor)
- Publication Details
- ADVANCED MATERIALS, v 2005(1)
- Series
- AIP Conference Proceedings
- Publisher
- American Institute of Physics
- Number of pages
- 9
- Grant note
- 2/0178/15 / VEGA project; Vedecka grantova agentura MSVVaS SR a SAV (VEGA) DE-SC0012575 / Center for the Computational Design of Functional Layered Materials (CCDM) - U.S. Department of Energy, Office of Science, Basic Energy Sciences; United States Department of Energy (DOE)
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:000447872500004
- Scopus ID
- 2-s2.0-85052464406
- Other Identifier
- 991019168451604721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Physics, Applied