Conference proceeding
Minimization of bias-induced memory effects in UHF radio frequency high power amplifiers with broadband signals
2007 IEEE RADIO AND WIRELESS SYMPOSIUM, pp.107-110
IEEE Radio and Wireless Symposium
01 Jan 2007
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
If the biasing circuit of a class AB radio frequency power amplifier (RF PA) does not present a zero impedance at the envelope frequencies, undesired ac voltages will be added to the dc supply voltage, producing amplitude and phase modulation of the RF output signal. Unfortunately, the sidebands due to this bias modulation fall exactly where the intermodulation distortion (IMD) products occur, producing their reinforcement or attenuation. This paper presents an effective biasing technique that minimizes this bias modulation while providing, at the same time, high impedance at the carrier frequency and low impedance at the second harmonic.
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Details
- Title
- Minimization of bias-induced memory effects in UHF radio frequency high power amplifiers with broadband signals
- Creators
- Marc Franco - Linearizer Technol Inc, Hamilton, NJ 08619 USAAllan Guida - Linearizer Technol Inc, Hamilton, NJ 08619 USAAllen Katz - Coll New Jersey, Ewing, NJ 08628 USAPeter Herczfeld - Drexel UniversityIEEE
- Publication Details
- 2007 IEEE RADIO AND WIRELESS SYMPOSIUM, pp.107-110
- Series
- IEEE Radio and Wireless Symposium
- Publisher
- IEEE
- Number of pages
- 4
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Identifiers
- 991019170496304721
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- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Telecommunications