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MoS2 synthesis and high-performance broadband photodetector
Conference proceeding

MoS2 synthesis and high-performance broadband photodetector

Gustavo A Saenz, Anupama B Kaul, Goran Karapetrov and James Curtis
2016 Lester Eastman Conference (LEC)
Aug 2016

Abstract

Broadband communication broadband photodetector CVD synthesis Fabrication Field effect transistors high photoresponsivity MoS 2 Photoconductivity Photodetectors Substrates Two dimensional displays
In this work, we report on the vapor-based synthesis of molybdenum disulphide (MoS 2 ), which is one of the most widely studied two-dimensional (2D) layered materials since the large body of work conducted on the quintessential layered material, graphene. In addition, we have fabricated and characterized a MoS 2 photodetector which was formed using a visco-elastic stamping technique. This device exhibits a low Schottky barrier height of ~27 meV and a photoresponsivity of 1,314 A/W at room temperature using a broad band light source with irradiance power of 0.134 nW at 5 V drain-source voltage. Our results show the promise of MoS 2 for photodetectors and a range of other applications.

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