Conference proceeding
Modelling the photoresponse of heterojunction bipolar transistors
1995 25th European Microwave Conference, v 1, pp 175-178
Sep 1995
Abstract
An analytic model, which solves for the electrical and photogenerated currents in the emitter, base and collector of an HBT, is presented. Self aligned and non self-aligned devices, which have different empirical characteristics, are discussed. In the case of abrupt junctions, the model provides a correction term for the boundary conditions that account for band discontinuities. Experimental and theoretical results relating to the characteristics of the illuminated device given.
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Details
- Title
- Modelling the photoresponse of heterojunction bipolar transistors
- Creators
- L E M deBarrosA Paolella - Drexel UniversityP Herczfeld - DEVCOM Army Research LaboratoryP Enquist - RTI International
- Publication Details
- 1995 25th European Microwave Conference, v 1, pp 175-178
- Conference
- 1995 25th European Microwave Conference EuMC 1995, 25th (Bologna, Italy, 04 Sep 1995–04 Sep 1995)
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Scopus ID
- 2-s2.0-85040623268
- Other Identifier
- 991019173908504721