Conference proceeding
Nd:LiNbO/sub 3/ microchip laser with 20 GHz subcarrier
1997 IEEE MTT-S International Microwave Symposium Digest, v 1, pp 229-232
1997
Abstract
This paper reports on the development of a 20 GHz mode-locked Nd:LiNbO/sub 3/ microchip laser operating at 1.084 /spl mu/m with an output power greater than 35 mW (CW). With this configuration, a single device simultaneously generates the optical carrier and the microwave subcarrier. A modulation index of 96% was obtained for a driving microwave power of 12.6 dBm at 20 GHz. An information signal up to 8 GHz was also superimposed on the 20 GHz subcarrier using an external modulator.
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Details
- Title
- Nd:LiNbO/sub 3/ microchip laser with 20 GHz subcarrier
- Creators
- A.J.C Vieira - Drexel UniversityP.R HerczfeldV.M Contarino
- Publication Details
- 1997 IEEE MTT-S International Microwave Symposium Digest, v 1, pp 229-232
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Other Identifier
- 991019203461304721