Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings
01 Jan 2019
Conference Title: 2019 IEEE International Reliability Physics Symposium (IRPS) Conference Start Date: 2019, March 31 Conference End Date: 2019, April 4 Conference Location: Monterey, CA, USA Here we present for the first time the use of gyrotron beam for selective annealing/activation of implanted Mg in bulk GaN films. Samples with 1 μm uGaN epi-Iayer grown by MOCVD on HVPE bulk n+GaN substrates were implanted with Mg (1 x 1019 c−3) to a target depth of 500 nm. A systematic investigation of annealing temperature, N 2 overpressure, surface capping layer, and sample orientation to the beam are presented. Post-implantation, volumetric lattice deformation was recovered by performing continuous annealing at temperatures $>$ 1100 °C for 30 s. Both AIN capped and uncapped samples were studied. It is shown that the surface of uncapped GaN samples which were annealed at 1100 °C in 40 bar N 2 overpressure remained intact. Photoluminescence spectroscopy was performed and confirmed the incorporation of Mg in substitutional sites with this technique, along with formation of large density of nitrogen vacancy defects.
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- Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN
- K HoganS TozierE RoccoI MahaboobV MeyersB McEwenF Shahedipour-SandvikR TompkinsM DerengeKenneth JonesM ShevelevV SklyarA LangJ HartM TaheriM Reshchikov
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Conference proceeding
- English
- 991019335226904721